Showing posts with label DRAM. Show all posts
Showing posts with label DRAM. Show all posts

Saturday, October 10, 2020

World ´s First DDR5 DRAM launched by SKhynix.

 




SK hynix Inc. (from South Korea) announced to launch the world’s first DDR5 DRAM. It is a high-speed and high-density product optimized for Big Data, Artificial Intelligence (AI), and machine learning (ML) as a next-generation standard of DRAM.

 

Since SK hynix announced the development of World’s First 16 Gigabit (Gb) DDR5 DRAM on November 2018, the Company has provided its major partners including Intel with sample products, and has completed various tests and verification of its functions and compatibility. This will allow SK hynix to provide its customers with the products once the DDR5 market becomes active.

In the meantime, SK hynix has conducted a joint-operation of the on-site lab, system-level test, and simulation with System-on-Chip1) (SoC) manufacturers to verify the functions of DDR5. Also, the Company validated the compatibility of its DDR5 and the major components on the DRAM module including register clock driver2) (RCD), which affect DRAM performance, and power management integrated circuit3) (PMIC). Through these verifications, SK hynix has been collaborating closely with its global partners.

 

SK hynix’s DDR5 supports a transfer rate of 4,800 ~ 5,600 Megabit-per-second (Mbps), which is 1.8 times faster than the previous generation – DDR4. It can transmit 9 full-HD (FHD) movies (5GB each) per second with a 5,600Mbps transfer rate. Its operating voltage is 1.1V being lowered from 1.2V of DDR4, which means that its power consumption is reduced by 20%.

Another notable specification of the Company’s DDR5 is Error Correcting Code (ECC) inside the chip that can correct even 1-bit-level errors by itself. With the ECC, the reliability of applications will be increased by 20 times. The Company’s DDR5 also could build up to 256 Gigabyte (GB) capacity applying through-silicon-via (TSV) technology.

The Company expects that these eco-friendly semiconductor memories will reduce both the power consumption and operating costs of data centers as DDR5 consumes less power and significantly improves its reliability.

“Intel partnered closely with memory leaders including SK hynix on the DDR5 spec development starting with early architecture concepts through JEDEC standardization,” commented Carolyn Duran, Vice President of Intel’s Data Platforms Group and GM of Memory and IO Technologies. “In addition, we worked collaboratively with SK hynix on silicon development by designing and testing prototypes to ensure DDR5 meets its performance goals and are fully ready for our mutual customers.”

“As SK hynix has launched World’s First DDR5 DRAM, The company could lead the future technology trend in the global DRAM market,” said Jonghoon Oh, Executive Vice President and Chief Marketing Officer (CMO) at SK hynix. “SK hynix will focus on the fast-growing premium server market, solidifying its position as a leading company in server DRAM.”

Meanwhile, DDR5 standard was published by JEDEC (JEDEC Solid State Technology Association) earlier on July 2020. According to market intelligence provider Omdia, the DDR5 demand will begin its surge in 2021, and it will possess 10% of the total global DRAM market in 2022 and increase to 43% in 2024.

Synopsys, Renesas, Montage Technology, and Rambus have also stated their commitment to the continuing cooperation in creating the DDR5 ecosystem.

“Synopsys has collaborated with SK hynix to deliver highly reliable DDR5 solutions for advanced high-performance computing SoCs requiring ultra-fast and high-capacity memory subsystems,” said John Koeter, senior vice president of marketing and strategy for IP at Synopsys. “Our silicon-proven DesignWare DDR5/4 IP has been validated using numerous SK hynix DDR5 RDIMMs at up to 6400 Mbps, helping designers minimize risk and meet their high-performance requirements of data-intensive SoCs.”

“As the leading supplier of memory interface products for every generation of memory over the last twenty years, we pride ourselves on strong engagements with our key partners and customers. Renesas has worked closely with SK hynix to qualify a complete portfolio of DDR5 products for server, client, and embedded markets.” Rami Sethi – Vice President and General Manager of Renesas’ Data Center Business Division

“Montage Technology is thrilled to partner with SK hynix on enabling the DDR5 memory ecosystem. As a leading vendor, we have been collaborating with SK hynix through many DDR generations, and are committed to providing high-performance, low-power memory interface solutions. Currently, Montage Technology offers a comprehensive portfolio of DDR5 logic devices – we are excited to further help SK hynix accelerate DDR5 market adoption,” Geof Findley, VP of Sales and Business Development at Montage Technology

“Compute-intensive workloads in the data center are accelerating the need for greater memory capacity and bandwidth,” said Chien-Hsin Lee, vice president, and general manager, Integrated Circuits at Rambus. “DDR5 DRAM answers the call with higher data rates and new innovations that dramatically boost memory performance. Employing a new generation of memory interface chips, DDR5 RDIMMs and LRDIMMs will unleash the processing power of server platforms. We are pleased to partner with SK hynix to enable next-generation technology for the ecosystem and fulfill the growing demand for DDR5.”

Annotation

■ SoC (System on Chip)
A single-chip solution integrating peripherals that interlock to the system bus and the central processing unit (CPU).

■ RCD(Register Clock Driver)
An active element that is used in RDIMM and LRDIMM for servers, which ensures the signal quality between the transmitter and the receiver by amplifying commands and data signals applied to memory from memory controllers.

■ PMIC (Power Management Integrated Circuit)
An integrated circuit that receives the main power input and rectifies, divides and controls it into a stable and efficient voltage or current required by the electronics; PMIC is adopted in the DDR5 DRAM module for the first time.

 

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Tuesday, October 13, 2015

2Q 2015: Samsung takes the DRAM global market with 45.2 % market share.

Resultado de imagen de samsung

South Korea's tech titan Samsung Electronics Co. posted a record share of the global dynamic random access memory (DRAM) market in the second quarter, data showed Tuesday, reflecting the rising presence of chips in its business portfolio.
Samsung's share of the global DRAM market came to 45.2 percent of the global DRAM market in sales in the April-June period, up 1.1 percentage points from the previous quarter and the company's highest quarterly figure to date, according to the data compiled by industry tracker IHS Inc.
Samsung's portion of the DRAM market had been in the 40 percent range since the third quarter of 2014.
The previous quarterly high was 45 percent recorded in the third quarter of 2011, with Samsung posting an all-time yearly high of 42.2 percent that year.
Industry watchers said Samsung's strong performance is attributable to its 20-nanometer production technology, which is also expected to give the tech giant the upper hand for the time being.
Samsung's smaller local rival SK hynix Inc. followed with a 27.3 percent share, down 0.3 percentage point from the previous three-month period. U.S.-based Micron Technology Inc. held 20.4 percent in the second quarter.


The Evolution of Samsung Mobile DRAM. Infographic.


In September, Samsung announced yet another industry-first—the 12 Gigabit LPDDR4 DRAM. This advance means that mobile devices will soon arrive with up to 6GB of RAM, along with accompanying advantages in performance and energy efficiency.

With three consecutive CES Innovation Awards in the Embedded Tech category, from 2013 to 2015, Samsung is the only company to have three straight wins for mobile DRAM:
  • 2013 – 2GB LPDDR3 Mobile DRAM
  • 2014 – 3GB LPDDR3 Mobile DRAM
  • 2015 – 4GB LPDDR4 Mobile DRAM

Here’s a historical look at Samsung’s innovations in mobile DRAM, which have been defining the cutting-edge in mobile devices for so long.


DRAM_Info_1005

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