Samsung Showcases Industry-leading Flash Technologies to Address Growing Requirements of Storage Systems.
Samsung Electronics, the world leader in
advanced memory technology, today introduced a blueprint for
next-generation flash memory solutions that will meet the
ever-increasing demands of big data networks, cloud computing and
real-time analysis.
At Flash Memory Summit 2016*, held in the Santa Clara (CA) Convention Center, Samsung showcased its 4th
generation Vertical NAND (V-NAND) and a line-up of high-performance,
high-capacity solid state drives (SSDs) available for its enterprise
customers as well as Z-SSD, a new solution providing breakthrough
performance for flash-based storage.
Samsung’s new flash storage devices are expected to contribute
significantly to the global IT industry in meeting the growing storage
requirements of today’s enterprise computing environment. These
solutions will accommodate enormous amounts of data, and extremely
high-speed information processing, while enhancing the total cost of
ownership (TCO) for data centers.
“With our 4th generation V-NAND technology, we can provide
leading-edge differentiated values in high capacity, high performance
and compact product dimensions, which together will contribute to our
customers achieving better TCO results,” said Young-Hyun Jun, President
of the Memory Business at Samsung Electronics. “We will continue to
introduce more advanced V-NAND solutions and expand our flash business
initiatives in maximizing an unbeatable combination of performance and
value.”
Samsung’s 4th Generation V-NAND Stacks 30 Percent More Layers of Cell-Arrays than its Predecessor
Samsung introduced its 4th generation, 64-layer triple-level-cell
V-NAND flash memory that pushes the envelope of NAND scaling,
performance and storage capacity. Stacking 64 layers of cell-arrays, the
new V-NAND can increase its single-die density to an industry-leading
512Gb and its IO speed to 800Mbps, which further distinguishes Samsung’s
technology leadership in three-dimensional NAND cell structure design
and production. Starting in August 2013, Samsung has previously
introduced three generations of “industry-first” V-NAND products with
24, 32 and 48-layer vertical cell-array stacking technologies.
Samsung plans to provide the world’s first 4th generation
V-NAND flash memory products in the fourth quarter of this year, which
will help manufacturers to produce faster, more stylish and portable
computing devices, while offering consumers a more responsive computing
environment.
World Largest Capacity Drive − 32TB SAS SSD − for Enterprise Storage Systems
Samsung’s latest Serial Attached SCSI (SAS) SSD is the world largest
single drive ever introduced to the industry based on 512-gigabit (Gb)
V-NAND chips. A total of 512 V-NAND chips are stacked in 16 layers to
form a 1-terabyte (TB) package and the 32-terabyte (TB) SSD contains 32
of those packages.
By adopting a new 4th generation V-NAND design, the 32TB
SAS SSD can reduce system space requirements up to 40 times compared
with the same type of system using two racks of hard disk drives (HDDs).
The 32TB SAS SSD will come in a 2-5-inch form factor and be produced in
2017. Samsung also expects that SSDs with more than 100TB of storage
capacity will be available by 2020, thanks to continued refinement of
V-NAND technology.
1TB Memory in a Single BGA Package
The Samsung 1TB BGA SSD features an extremely compact, ball grid
array (BGA) package design that contains all essential SSD components
including triple-level-cell V-NAND flash chips, LPDDR4 mobile DRAM and a
state-of-the-art Samsung controller.
It will deliver unprecedented performance, reading sequentially at
1,500MB/s and writing sequentially at 900MB/s. By reducing its size up
to 50 percent compared to its predecessor, the SSD weighs only about one
gram (less than half the weight of a U.S. dime), making it ideal for
ultra-compact next generation notebooks, tablets and convertibles.
Next year, Samsung plans to launch its 1TB BGA SSD by adopting a
high-density packaging technology called “FO-PLP (Fan-out Panel Level
Packaging)” which Samsung Electronics developed with Samsung
Electro-Mechanics.
New ‘Z- SSD’ Breaks through Performance Limits of Current NAND Flash Memory Storage
Samsung has also developed a high performance, ultra-low latency SSD
solution, the Z-SSD. Samsung’s Z-SSD shares the fundamental structure of
V-NAND and has a unique circuit design and controller that can maximize
performance, with four times faster latency and 1.6 times better
sequential reading than the Samsung PM963 NVMe** SSD.
The Z-SSD will be used in systems that deal with extremely intensive
real-time analysis as well as extending high performance to all types of
workloads. It is expected to be released next year.
* Flash Memory Summit (FMS), produced
by Conference ConCepts, showcases the mainstream applications, key
technologies, and leading vendors that are driving the multi-billion
dollar non-volatile memory and SSD markets. FMS is now the world’s
largest event featuring the trends, innovations, and influencers driving
the adoption of flash memory in demanding enterprise storage
applications, as well as in smartphones, tablets, and mobile and
embedded systems. For more information, please visit at www.flashmemorysummit.com/
** Often shortened as NVMe, NVM
Express (Non-Volatile Memory Express) is an optimized, high performance,
scalable host controller interface with a streamlined register
interface and command set designed for enterprise and client systems
that use PCIe SSDs. For more information, please visit www.nvmexpress.org
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