Samsung Starts Mass Producing Industry’s First 10-Nanometer Class DRAM.
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first 10-nanometer (nm) class* , 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips and the modules derived from them. DDR4 is quickly becoming the most widely produced memory for personal computers and IT networks in the world, and Samsung’s latest advancement will help to accelerate the industry-wide shift to advanced DDR4 products.
Samsung opened the door to 10nm-class* DRAM for the first time in the industry after overcoming technical challenges in DRAM scaling. These challenges were mastered using currently available ArF (argon fluoride) immersion lithography, free from the use of EUV (extreme ultra violet) equipment.
Samsung’s roll-out of the 10nm-class (1x) DRAM marks yet another milestone for the company after it first mass produced 20-nanometer (nm)** 4Gb DDR3 DRAM in 2014.
“Samsung’s 10nm-class DRAM will enable the highest level of investment efficiency in IT systems, thereby becoming a new growth engine for the global memory industry,” said Young-Hyun Jun, President of Memory Business, Samsung Electronics. “In the near future, we will also launch next-generation, 10nm-class mobile DRAM products with high densities to help mobile manufacturers develop even more innovative products that add to the convenience of mobile device users.”
Samsung’s leading-edge 10nm-class 8Gb DDR4 DRAM significantly improves the wafer productivity of 20nm 8Gb DDR4 DRAM by more than 30 percent.
The new DRAM supports a data transfer rate of 3,200 megabits per second (Mbps), which is more than 30 percent faster than the 2,400Mbps rate of 20nm DDR4 DRAM. Also, new modules produced from the 10nm-class DRAM chips consume 10 to 20 percent less power, compared to their 20nm-process-based equivalents, which will improve the design efficiency of next-generation, high-performance computing (HPC) systems and other large enterprise networks, as well as being used for the PC and mainstream server markets.
The industry-first 10nm-class DRAM is the result of Samsung’s advanced memory design and manufacturing technology integration. To achieve an extremely high level of DRAM scalability, Samsung has taken its technological innovation one step further than what was used for 20nm DRAM. Key technology developments include improvements in proprietary cell design technology, QPT (quadruple patterning technology***) lithography, and ultra-thin dielectric layer**** deposition.
Unlike NAND flash memory, in which a single cell consists of only a transistor, each DRAM cell requires a capacitor and a transistor that are linked together, usually with the capacitor being placed on top of the area where the transistor rests. In the case of the new 10nm-class DRAM, another level of difficulty is added because they have to stack very narrow cylinder-shaped capacitors that store large electric charges, on top of a few dozen nanometer-wide transistors, creating more than eight billion cells.
Samsung successfully created the new 10nm-class cell structure by utilizing a proprietary circuit design technology and quadruple patterning lithography. Through quadruple patterning, which enables use of existing photolithography equipment, Samsung also built the core technological foundation for the development of the next-generation 10nm-class DRAM (1y).
In addition, the use of a refined dielectric layer deposition technology enabled further performance improvements in the new 10nm-class DRAM. Samsung engineers applied ultra-thin dielectric layers with unprecedented uniformity to a thickness of a mere single-digit angstrom (one 10 billionth of a meter) on cell capacitors, resulting in sufficient capacitance for higher cell performance.
Based on its advancements with the new 10nm-class DDR4 DRAM, Samsung expects to also introduce a 10nm-class mobile DRAM solution with high density and speed later this year, which will further solidify its leadership in the ultra-HD smartphone market.
While introducing a wide array of 10nm-class DDR4 modules with capacities ranging from 4GB for notebook PCs to 128GB for enterprise servers, Samsung will be extending its 20nm DRAM line-up with its new 10nm-class DRAM portfolio throughout the year.
Sharp Begins Production of World's First LCD Panels Incorporating IGZO Oxide Semiconductors
In March 2012 at Kameyama Plant No. 2, Sharp began producing the world's first high-performance LCD panels incorporating IGZO oxide semiconductors. Sharp is expanding production scale through April to meet market demand. Kameyama Plant No. 2 first started operations in August 2006, manufacturing highly advanced LCD panels for TVs. Production systems have subsequently been reorganized to focus on producing small- and medium-sized LCD panels for the world's rapidly growing smartphone and tablet terminal markets. Employing advanced IGZO oxide semiconductors enables Sharp to produce LCDs with smaller thin-film transistors and increased pixel transparency, thus allowing for lower energy consumption. In addition, proprietary UV2A*3 photo-alignment technology employed in Sharp's AQUOS LCD TVs enables these displays to achieve hi…
This update brings the following enhancements: ▪ Removes purple hue which affected the screen of some devices in low light conditions▪ Improved sensitivity for the proximity sensor▪ Other minor adjustments and enhancements This update is only for Nokia Lumia 900 on AT&T’s network in the
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rolling out new updates and surprises in the near future to all Lumia
900 users, so stay tuned! To get the update, be sure to use Zune for Windows. How to update your Nokia Lumia 900 via PC, check out this video:
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Who created zoomStand?zoomStand was a collaborative effort by two friends who needed more out of their various laptop stands, desk risers, tablet holders and props. From being restricted by injuries and forced into uncomfortable com…