Samsung Begins Mass-producing 256 GB 3D V-NAND Chips




48 layers of 3-bit-cell arrays are stacked together on a single chip to store 32 gigabytes of data with approximately 40 percent more productivity.


Samsung Electronics announced today that it has begun mass producing 256 Gb 3D V-NAND flash memory chips for use in solid state drives (SSDs). These new chips have 48 layers of 3-bit multi-level-cell (MLC) arrays, which is double the density of conventional 128Gb NAND flash chips. These chips are the ideal solution for multi-terabyte SSDs.
“With the introduction of our 3rd generation V-NAND flash memory to the global market, we can now provide the best advanced memory solutions with even higher efficiency based on improved performance, power utilization and manufacturing productivity, thereby accelerating growth of the high-performance and the high-density SSD markets,” said Jun Young-hyun, president of the memory business at Samsung Electronics.
Samsung introduced its 2nd generation V-NAND (32-layer 3-bit MLC V-NAND) chips in August 2014, just one year ago. It continues to push out new versions of these chips, hoping to maintain control over the memory market.
In the new V-NAND chip, each cell utilizes the same 3D Charge Trap Flash (CTF) structure in which the cell arrays are stacked vertically to form a 48-storied structure that is electrically connected through some 1.8 billion channel holes punching through the arrays thanks to a special etching technology. 
In total, each chip contains over 85.3 billion cells. Each cell can store 3 bits of data, resulting in 256 billion bits of data. In other words, there is 256Gb on a chip no larger than a fingertip. It also consumes 30 percent less power compared to last year's chip. The process to create the chips is also 40 percent more productive than last year as well using mostly existing equipment, since the company has had some practice in making them.
BK

Press Release:

Samsung Electronics Begins Mass Producing Industry First 256-Gigabit, 3D V-NAND Flash Memory.


Samsung Electronics, the world leader in advanced memory technology, announced that it has begun mass producing the industry’s first 256-gigabit (Gb), three-dimensional (3D) Vertical NAND (V-NAND) flash memory based on 48 layers of 3-bit multi-level-cell (MLC) arrays for use in solid state drives (SSDs).

“With the introduction of our 3rd generation V-NAND flash memory to the global market, we can now provide the best advanced memory solutions, with even higher efficiency based on improved performance, power utilization and manufacturing productivity, thereby accelerating growth of the high-performance and the high-density SSD markets,” said Young-Hyun Jun, President of the Memory Business at Samsung Electronics. “By making full use of Samsung V-NAND’s excellent features, we will expand our premium-level business in the enterprise and data center market segments, as well as in the consumer market, while continuing to strengthen our strategic SSD focus.”

Samsung’s new 256Gb 3D V-NAND flash doubles the density of conventional 128Gb NAND flash chips. In addition to enabling 32 gigabytes (256 gigabits) of memory storage on a single die, the new chip will also easily double the capacity of Samsung’s existing SSD line-ups, and provide an ideal solution for multi-terabyte SSDs.

Samsung introduced its 2nd generation V-NAND (32-layer 3-bit MLC V-NAND) chips in August 2014, and launched its 3rd generation V-NAND (48-layer 3-bit MLC V-NAND) chips in just one year, in continuing to lead the 3D memory era.

In the new V-NAND chip, each cell utilizes the same 3D Charge Trap Flash (CTF) structure in which the cell arrays are stacked vertically to form a 48-storied mass that is electrically connected through some 1.8 billion channel holes punching through the arrays thanks to a special etching technology. In total, each chip contains over 85.3 billion cells. They each can store 3 bits of data, resulting 256 billion bits of data, in other words, 256Gb on a chip no larger than the tip of a finger.

A 48-layer 3-bit MLC 256Gb V-NAND flash chip consumes over a 30 percent reduction in power compared to a 32-layer, 3-bit MLC, 128Gb V-NAND chip when storing the same amount of data. During production, the new chip also achieves approximately 40 percent more productivity over its 32-layer predecessor, bringing much enhanced cost competitiveness to the SSD market, while mainly utilizing existing equipment.

Samsung plans to produce 3rd generation V-NAND throughout the remainder of 2015, to enable more accelerated adoption of terabyte-level SSDs. While now introducing SSDs with densities of two terabytes and above for consumers, Samsung also plans to increase its high-density SSD sales for the enterprise and data center storage markets with leading-edge PCIe NVMe and SAS interfaces.

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