WorldWide Tech & Science. Francisco De Jesús.
Intel announced “a significant breakthrough in the evolution of the transistor,” with the intention to take a transistor with a three-dimensional structure into high-volume manufacturing for the first time.
Intel announced “a significant breakthrough in the evolution of the transistor,” with the intention to take a transistor with a three-dimensional structure into high-volume manufacturing for the first time.
Called Tri-Gate, the 3D design will be used in an Intel chip codenamed 'Ivy Bridge,' which it says will be able to operate at a lower voltage with lower leakage, “providing an unprecedented combination of improved performance and energy efficiency compared to previous state-of-the-art transistors.”
The company said the 22nm 3D Tri-Gate transistors will provide up to 37 percent performance increase at low voltage versus Intel’s 32nm planar (2D) products, which means they are “ideal for use in small handheld devices.” Ivy Bridge is set to be ready for high-volume production readiness by the end of this year.
According to Intel, scientists have long recognised the benefits of a 3D structure to sustain the pace of Moore’s Law, as dimensions become so small that physical laws become barriers to development.
It began its work on the Tri-Gate transistor in 2002, with the announcement it is set to use the technology in production chips following “years of development in Intel’s highly coordinated research-development-manufacturing pipeline.”
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