Samsung Electronics Co. and SK hynix Inc. claimed made the World’s First Next Generation Mobile Memory Low Power DDR4.

WorldWide Tech & Science. Francisco De Jesùs.



Both Samsung Electronics Co. and SK hynix Inc. claimed Monday to have developed the next-generation mobile DRAM (dynamic random access memory) chip with twice-as-fast speed than the existing model.
Dubbed the new LPDDR4 (Low Power DDR4), the product is the industry's first eight-gigabit memory chip using 20 nanometer technology with a speed of 3,200 megabits per second (Mbps), two times faster than the 1,600 Mbps of its predecessor LPDDR3, the companies said.
The two South Korean tech giants each claimed that they have developed the world's first LPDDR 4 on Thursday.

The latest DRAM chip can run on a relatively small power of 1.1 volts, lower than the 1.2 volts of the existing LPDDR3, they said.

Its mass production will start in the second half of 2014.

Samsung, the world's largest manufacturer of computer memory chips, said it will focus on the premium mobile devices and ultra-slim notebooks with the new chip.

SK hynix said the new mobile DRAM will be applied in flagship mobile devices starting next year and gradually expand its presence to become the industry's leading product by 2016.

"The company will further strengthen its competitiveness in the mobile area with the development of high density, ultrahigh speed and low power consuming products," it said. 


Below you can find both companies individual Press Releases. Samsung was published by BusinessWire on Dec 29,2013, and SK Hynix themselves on Dec 30, 2013.


Press Release:


Samsung Develops Industry’s First 8Gb LPDDR4 Mobile DRAM

Ushering in the next-generation of ultra-fast mobile memory to meet growing market demand

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has developed the industry’s first eight gigabit (Gb), low power double data rate 4 (LPDDR4), mobile DRAM.


“This next-generation LPDDR4 DRAM will contribute significantly to faster growth of the global mobile DRAM market, which will soon comprise the largest share of the entire DRAM market,” said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. “We will continue introducing the most advanced mobile DRAM one step ahead of the rest of the industry so that global OEMs can launch innovative mobile devices with exceptional user convenience in the timeliest manner.”
Samsung’s new high-speed 8Gb LPDDR4 mobile DRAM will provide the highest level of density, performance and energy efficiency for mobile memory applications, enabling end users to have faster, more responsive applications, more advanced features, and higher resolution displays while maximizing battery life.
The 8Gb LPDDR4 is fabricated on 20-nanometer (nm) class* process technology, and offers 1 gigabyte (GB) on a single die, which is the largest density available for DRAM components today. With four of the 8Gb chips, a single 4GB LPDDR4 package can provide the highest level of performance available today.
In addition, Samsung’s new 8Gb LPDDR4 uses a Low Voltage Swing Terminated Logic (LVSTL) I/O interface, which was originally proposed by Samsung to JEDEC and has become a standard specification for LPDDR4 DRAM. Based on this new interface, the LPDDR4 chip will enable a data transfer rate per pin of 3,200 megabits per second (Mbps), which is twice that of the 20nm-class LPDDR3 DRAM now in mass production. Overall, the new LPDDR4 interface will provide 50 percent higher performance than the fastest LPDDR3 or DDR3 memory. Also, it consumes approximately 40 percent less energy at 1.1 volts.
With the new chip, Samsung will focus on the premium mobile market including large screen UHD smartphones, tablets and ultra-slim notebooks that offer four times the resolution of full-HD imaging, and also on high-performance network systems.
Samsung is leading mobile DRAM technology development and is the leader in mobile DRAM market share with its 4Gb and 6Gb LPDDR3. It started offering the thinnest and smallest 3GB LPDDR3 (6Gb) package solutions in November and will provide its new 8Gb LPDDR4 DRAM in 2014. The 8Gb mobile DRAM chip will rapidly expand the market for high-density DRAM in next-generation mobile devices.
About Samsung Electronics Co., Ltd.
Samsung Electronics Co., Ltd. is a global leader in technology, opening new possibilities for people everywhere. Through relentless innovation and discovery, we are transforming the worlds of televisions, smartphones, personal computers, printers, cameras, home appliances, LTE systems, medical devices, semiconductors and LED solutions. We employ 270,000 people across 79 countries with annual sales of US$187.8 billion. To discover more, please visit www.samsung.com.
* Editors’ Note: 20nm-class means a process technology node somewhere between 20 and 30 nanometers

Contacts

Samsung Semiconductor
John Lucas, APR, 408-544-4363

Press Release:

SK Hynix Developed the World’s First Next Generation Mobile Memory LPDDR4

SK Hynix Inc. (or ‘the Company’, www.skhynix.com) announced that it has developed the world’s first 8Gb(Gigabit) LPDDR4(Low Power DDR4) using its advanced 20nm class technology. LPDDR4 is the next generation mobile DRAM interface on the process of standardization which features ultrahigh speed and low power consumption.

This new product works at 3200Mbps and ultra low-voltage of 1.1V which runs two times faster than 1600Mbps and does at lower voltage than 1.2V of existing LPDDR3. The Company has been strengthening its cooperation with the customers for the standardization of this new mobile DRAM by providing the samples of LPDDR4 to major customers and SoC(System on Chip) companies.

Especially, SK Hynix is to continuously maintain its technology leadership in the mobile market by developing the world’s first 8Gb LPDDR4 following the development of the world’s first 8Gb and 6Gb LPDDR3. The Company plans to start mass production of it from the second half of next year.

“SK Hynix secured its technology leadership by developing the world’s first next generation mobile memory LPDDR4 and providing samples of the product to the customers” said Senior Vice President Richard Chin, the Head of Global Sales Marketing. “The Company will further strengthen its competitiveness in the mobile area with the development of high density, ultrahigh speed and low power consuming products” he added.

The new interface LPDDR4 is expected to be loaded onto flagship mobile devices at the end of 2014 and is anticipated to be commercialized regularly from 2015. Plus, it is expected to be the main product in the industry from 2016.


About SK Hynix Inc.
SK Hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), Flash memory chips ("NAND Flash") and CMOS Image Sensors ("CIS") for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK Hynix is available at www.skhynix.com.

Media Contact
SK Hynix Inc.
Public Relations
Assistant Manager
Heeyoung Son
Phone: +82.2.3459.5316
E-Mail: heeyoung.son@sk.com

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